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1550nm DFB 10GHz EML Laser Diode

Box Optronics owns the factory and supports 1550nm DFB 10GHz EML Laser Diode.
Wavelength optional: 1530nm,1550nm or other
Output power customized: 5mW or other
Where 1550nm DFB 10GHz EML Laser Diode can be used?
Optical coherence tomography (OCT);
Fiber optic gyroscope (FOG);
Atomic force microscope(AFM), etc.

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Product Description

1.Ordering information
BRLD -XXX -XX -XX -XX
Laser type Wavelength(nm) Output power(mW) Fiber type Connector type
Modulation Laser 1530: 1530nm
1550: 1550nm
Other
05: 5
10: 10
SM : Single mode
PM : Polarizationmaintaining
FA : FC/APC
SA : SC/APC
N0: Null

Own factory, support customized.
Hot: 1550nm DFB 10GHz EML Laser Diode

2.Features of 1550nm DFB 10GHz EML Laser Diode
Modulation bandwidth: 10GHz or more;
Industry-standard butterfly package;
High-performance, multiquantum well(MQW)
Built-in TEC and optical isolator;
distributed-feedback (DFB) chip.

3.Applications of 1550nm DFB 10GHz EML Laser Diode
SONET/SDH line and client transponders;
DWDM/CWDM transponders;
Line Cards.

4.Electro-Optical Characteristics
.Parameter Symbol Condition Min. Typ. Max. Unit
ON level modulator voltage VO - -0.7 - 0 V
Threshold current ITH CW,Vm=V0 - 15 30 mA
Operating current IOP - 40 - 100 mA
Dispersion penalty dP *1 - - 2.0 dB
Forward voltage VF CW,If=Iop - 1.4 2.0 V
Modulation voltage VPP - - 2 2.6 V
Extinction ratio REXT *2 10 - - dB
Peak oscillation wavelength λP *2 1530 - 1565 nm
Side-mode SuppressionRatio SMSR CW 35 - - dB
Rise Time tR 20 to 80%*2 - 20 25 ps
Fall Time tF 20 to 80%*2 - 20 25 ps
Monitor Current Im CW, IF =IOP, Vm=Vo, VDR =5V 40 - 1100 μA
Monitor Dark Current ID VDR =5V - 2 100 nA
Monitor Capacitance CT VDR =5V - 2 15 pF
TEC Current ITEC TL = 25 °C, TC = 70°C - - 1.0 A
TEC Voltage VTEC TL = 25 °C, TC = 70°C - - 2.4 V
Cooler power consumption PC CW, IF =IOP, Vm =VO, TC(OP) =-20°C to +70°C - - 2.4 W
Thermistor Resistance RTH TC(OP) =+25°C 9.5 - 10.5
Thermistor B constant B - 3270 3450 3630 K
Tracking error TE CW, IF =IOP, Vm =VO,TC(OP) =-20°C to +70°C -0.5 - +0.5 dB
Input Impedance ZIN - - 50 - Ω
High-frequency return loss S11 f=5GHz 50Ω test set, Vm =VO, IF =IOP 8 - - dB


f=10GHz 50Ω test set, Vm =VO, IF =IOP 5 - - dB
Cut off frequency S21 -3dB band width50Ω test set, Vm = VO - 0.5Vpp , IF =IOP 10 - - GHz
Relative Intensity Noise RIN CW, output power 5mW - - -120 dB/Hz
Isolation IS TC(OP) =-20°C to +70°C 25 35 - dB

5.Shipping
Lead time: 2-3 weeks after we received your payment.
If urgently needed, please ask if it's in stock.



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